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NSVMMUN2212LT1G

Parte No NSVMMUN2212LT1G
Produttore ON Semiconductor
Catalogo Transistors (BJT) - Single, Pre - Biased
Descrizione TRANS PREBIAS NPN 50V SOT23-3
Scheda tecnica
Campione
Stato RoHS rohs
Modelli ECAD
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Categorie Discrete Semiconductor Products
Tempo di consegna di produzione stimato 51 Weeks
Caratteristiche Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Costruttore ON Semiconductor
Imballaggio Reel - TR
Montaggio Surface Mount
Imballaggio TO-236-3, SC-59, SOT-23-3
Contenitore/involucro SOT-23-3 (TO-236)
Nome famiglia NSVMMUN2212
Livello MSL 1 (Unlimited)
Stato REACH REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Altro codice articolo NSVMMUN2212LT1GOSCT, NSVMMUN2212LT1GOSTR, NSVMMUN2212LT1GOSDKR, NSVMMUN2212LT1G-ND
Quantità per confezione 3000
Rischio di contraffazione sul mercato aperto 91 pct.
Popolarità Medium
Stato della domanda e dell'offerta Limited
Codice Articolo Win Source 887712-NSVMMUN2212LT1G
Modello 3D Ultra Librarian Ultra Librarian NSVMMUN2212LT1G Modello CAD

Descrizione

The NSVMMUN2212LT1G, manufactured by ON Semiconductor, is a state-of-the-art semiconductor device designed to offer reliable performance in various electronic applications. This product is a testament to ON Semiconductor's commitment to providing high-quality components that meet the stringent requirements of modern electronic devices.

Key Features

  • Bipolar Junction Transistor (BJT): The NSVMMUN2212LT1G is a BJT, which is a type of transistor that uses both electron and hole charge carriers. This characteristic allows for amplification and switching capabilities that are essential in many electronic circuits.
  • Surface-Mount Package: This component comes in a compact SOT-23 package, ideal for space-constrained applications. Its surface-mount technology (SMT) design allows for efficient assembly and a smaller footprint on printed circuit boards (PCBs).
  • Low Voltage Operation: The NSVMMUN2212LT1G is optimized for low voltage operation, making it suitable for battery-powered and portable devices where power conservation is critical.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify weak signals to higher levels, which is crucial for applications such as audio amplification and signal processing.
  • Automotive Qualification: This product is qualified for use in automotive applications, ensuring robust performance under harsh conditions and meeting the rigorous standards of the automotive industry.

Applications

The NSVMMUN2212LT1G is suitable for a wide range of applications, including but not limited to:

  • Signal amplification in audio and communication devices
  • Switching applications in power management systems
  • Driver circuits in LED lighting solutions
  • Control circuits in automotive electronics

Environmental and Quality Standards

ON Semiconductor's NSVMMUN2212LT1G is designed to meet environmental standards, featuring a lead-free and RoHS-compliant construction. This ensures that the product is environmentally friendly and adheres to international regulations regarding hazardous substances.

In conclusion, the NSVMMUN2212LT1G from ON Semiconductor is a versatile and reliable component that serves as a fundamental building block in a myriad of electronic circuits. Its robust design and compliance with automotive and environmental standards make it an excellent choice for designers and engineers looking for a high-performance BJT.

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Prezzi e Ordini (USD)

Quantità Prezzo unitario Prezzo totale
35+ $1.4552 $50.9320
85+ $1.1941 $101.4985
130+ $1.1567 $150.3710
180+ $1.1194 $201.4920
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* I prezzi sopra indicati non includono tasse e costi di spedizione, che verranno calcolati nelle pagine dell'ordine.
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Disponibilità: 66,000 pezzi
MOQ: 35 pz
Incremento Ordine : 1 pcs
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