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Parte No FDP12N50
Produttore ON Semiconductor
Catalogo FETs - Single
Descrizione N-Channel MOSFET 500V, 11.5A, 0.65Ω | MOSFET N-CH 500V 11.5A TO-220
Campione
Stato RoHS rohs
Modelli ECAD
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Categorie Discrete Semiconductor Products
Costruttore ON Semiconductor
Imballaggio Tube
Polarità del transistor N-Channel
Tecnologia MOSFET
Vds - Tensione di rottura drain-source 500V
Id - Corrente di drain continua 11.5A
Tensione di pilotaggio (Rds On max, Rds On min) 10V
Rds On (max) a Id, Vgs 650mOhm at 6A, 10V
Tensione gate-source (th) (max) a Id 5V at 250μA
Carica di gate (Qg) (max) a Vgs 30nC at 10V
Tensione gate-source (max) ±30V
Capacità di ingresso (Ciss) max a Vds 1315pF at 25V
Dissipazione di potenza (max) 165W
Intervallo di temperatura - Esercizio -55°C ~ 150°C
Tipo di montaggio Through Hole
Package del produttore TO-220-3
Package del costruttore TO-220-3
Quantità confezione del costruttore 1,000
Livello MSL 1 (Unlimited)
Codice Articolo Win Source 1173868-FDP12N50
Homepage del costruttore www.fairchildsemi.com
Materie prime Based on silicon element (Si) ; Blue-grey metallic luster
Popolarità Medium
Rischio di contraffazione sul mercato aperto 54 pct.
Stato della domanda e dell'offerta Limited
Modello 3D Ultra Librarian Ultra Librarian FDP12N50 Modello CAD

Descrizione

FDP12N50 MOSFET Overview

The FDP12N50 is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is engineered to deliver superior power efficiency and reliability for a wide range of applications. The FDP12N50 is particularly suited for high-power switching and power supply systems where energy efficiency is paramount.

Key Features

  • High Current Capability: The FDP12N50 is capable of handling continuous drain currents up to 12A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a drain-to-source voltage (Vdss) of 500V, this MOSFET can efficiently manage high voltage operations, providing a wide safety margin for electrical devices.
  • Low On-Resistance: The low on-state resistance (Rds(on)) of the FDP12N50 minimizes conduction losses, ensuring better power efficiency and thermal performance.
  • Fast Switching Speed: Fast switching capabilities reduce transition losses and improve the overall efficiency of the device in high-frequency applications.
  • Robust Thermal Characteristics: The FDP12N50 comes in a TO-220 package, which offers excellent heat dissipation properties to maintain stability under high thermal conditions.

Applications

The versatility of the FDP12N50 MOSFET makes it suitable for a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Inverters
  • Lighting systems
  • Industrial power systems

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The FDP12N50 MOSFET is subjected to rigorous testing and quality control measures to ensure it meets the high standards expected from ON Semiconductor products. Reliability is a cornerstone of this device's design, ensuring a long operational lifespan even under strenuous conditions.

Environmental Compliance

The FDP12N50 is designed with environmental considerations in mind. It complies with RoHS directives, which means it is free from hazardous substances, making it a safer choice for both the environment and consumers.

In summary, the FDP12N50 from ON Semiconductor is a robust, efficient, and reliable solution for designers looking to optimize their power management systems with a high-performance N-Channel MOSFET.

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