The BC817-40LT3G is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor. This small-signal transistor is a versatile component that is commonly used in a wide range of electronic applications, including switching and amplification circuits. With its compact SOT-23 surface-mount package, the BC817-40LT3G is ideal for space-constrained applications and modern high-density circuit boards.

Key Features:

• Transistor Type: NPN
• Maximum Collector-Emitter Voltage (Vceo): 45V
• Maximum Collector-Base Voltage (Vcbo): 50V
• Maximum Emitter-Base Voltage (Vebo): 5V
• Maximum Collector Current (Ic): 500mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 250 to 600 at 100mA
• Operating Temperature Range: -55°C to +150°C
• Package: SOT-23

The BC817-40LT3G is engineered to deliver excellent performance with a high current gain bandwidth product and low saturation voltage, making it suitable for high-speed switching applications. Its robust design ensures reliability and long-term stability, which is crucial for industrial and consumer electronics.

Applications:

• General-purpose switching
• Amplification circuits
• Driver stages in hi-fi amplifiers and television circuits
• Signal processing
• Power management

ON Semiconductor's commitment to quality is evident in the BC817-40LT3G, which is produced using state-of-the-art manufacturing processes that ensure consistent performance and high reliability. This component is a testament to ON Semiconductor's dedication to providing industry-leading solutions that meet the evolving needs of modern electronics.